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METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF GAN

Authors
  • dc, lu
  • wang, d
  • wang, xh
  • liu, xl
  • dong, jr
  • gao, wb
  • cj, li
  • yy, li
  • acad, lu dc r chinese
Publication Date
Jan 01, 1995
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
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Abstract

Single-crystal GaN films have been deposited on (01 (1) over bar 2) sapphire substrates using trimethylgallium (TMGa) and NH3 as sources. The morphological, crystalline, electrical and optical characterizations of GaN film are investigated. The carrier concentration ofundoped GaN increases with decreasing input NH3-to-TMGa molar flow ratio.

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