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Mapping the spatial distribution of charge carriers in LaAlO3/SrTiO3 heterostructures.

Authors
  • Basletic, M
  • Maurice, J-L
  • Carrétéro, C
  • Herranz, G
  • Copie, O
  • Bibes, M
  • Jacquet, E
  • Bouzehouane, K
  • Fusil, S
  • Barthélémy, A
Type
Published Article
Journal
Nature materials
Publication Date
Aug 01, 2008
Volume
7
Issue
8
Pages
621–625
Identifiers
DOI: 10.1038/nmat2223
PMID: 18587402
Source
Medline
License
Unknown

Abstract

At the interface between complex insulating oxides, novel phases with interesting properties may occur, such as the metallic state reported in the LaAlO(3)/SrTiO(3) system . Although this state has been predicted and reported to be confined at the interface, some studies indicate a much broader spatial extension, thereby questioning its origin. Here, we provide for the first time a direct determination of the carrier density profile of this system through resistance profile mappings collected in cross-section LaAlO(3)/SrTiO(3) samples with a conducting-tip atomic force microscope (CT-AFM). We find that, depending on specific growth protocols, the spatial extension of the high-mobility electron gas can be varied from hundreds of micrometres into SrTiO(3) to a few nanometres next to the LaAlO(3)/SrTiO(3) interface. Our results emphasize the potential of CT-AFM as a novel tool to characterize complex oxide interfaces and provide us with a definitive and conclusive way to reconcile the body of experimental data in this system.

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