Affordable Access

deepdyve-link
Publisher Website

Lumped Equivalent Circuit De-embedding of GaAs Structures [PHEMT Example]

Authors
  • Duff, C
  • Sloan, R
Publication Date
Jan 01, 2002
Identifiers
DOI: 10.1109/EDMO.2002.1174959
OAI: oai:escholar.manchester.ac.uk:uk-ac-man-scw-246423
Source
Manchester eScholar
Keywords
License
Unknown
External links

Abstract

RF on-wafer device measurements require the provision of probe contact pads and transmission line structures to feed the device ports. A lumped equivalent circuit of the feed structure as determined through the measurement of on-wafer dummy structures and electromagnetic simulation enables three-step device de-embedding to be performed by matrix conversion of the measured S-parameters. The technique is applied to measurements of a Filtronic 6×50 μm GaAs PHEMT to obtain pure device data for large-signal modelling. The drawbacks of using a lumped element technique for large device structures at high frequencies are highlighted.

Report this publication

Statistics

Seen <100 times