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Low-voltage flexible organic electronics based on high-performance sol-gel titanium dioxide dielectric.

Authors
Type
Published Article
Journal
ACS Applied Materials & Interfaces
1944-8252
Publisher
American Chemical Society
Publication Date
Volume
7
Issue
14
Pages
7456–7461
Identifiers
DOI: 10.1021/acsami.5b00281
PMID: 25751669
Source
Medline
Keywords
License
Unknown

Abstract

In this letter, we report that high-performance insulating films can be generated by judicious control over the microstructure of sol-gel-processed titanium dioxide (TiO2) films, typically known as wide-bandgap semiconductors. The resultant device made of 23 nm-thick TiO2 dielectric layer exhibits a low leakage current density of ∼1 × 10(-7) A cm(-2) at 2 V and a large areal capacitance of 560 nF cm(-2) with the corresponding dielectric constant of 27. Finally, low-voltage flexible organic thin-film transistors were successfully demonstrated by incorporating this versatile solution-processed oxide dielectric material into pentacene transistors on polyimide substrates.

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