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Low Temperature Transport in Undoped Mesoscopic Structures

Authors
  • Sarkozy, S.
  • Gupta, K. Das
  • Siegert, C.
  • Ghosh, A.
  • Pepper, M.
  • Farrer, I.
  • Beere, H. E.
  • Ritchie, D. A.
  • Jones, G. A. C.
Type
Preprint
Publication Date
Jul 17, 2008
Submission Date
Jul 17, 2008
Identifiers
DOI: 10.1063/1.3097806
Source
arXiv
License
Yellow
External links

Abstract

Using high quality undoped GaAs/AlGaAs heterostructures with optically patterned insulation between two layers of gates, it is possible to investigate very low density mesoscopic regions where the number of impurities is well quantified. Signature appearances of the scattering length scale arise in confined two dimensional regions, where the zero-bias anomaly (ZBA) is also observed. These results explicitly outline the molecular beam epitaxy growth parameters necessary to obtain ultra low density large two dimensional regions as well as clean reproducible mesoscopic devices.

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