Low temperature silicon epitaxy: defects and electronic properties

Authors

• Wagner, T.

Publication Date

Jan 01, 2003

Source

OpenGrey Repository

Keywords

• 20D - Atomic Physics, Molecular Physics
• 09C - Electronic Devices, Electromechanical Devices
• Carrier Lifetime
• Crystal Defects
• Ion Collisions
• Molecular Beam Epitaxy
• Monocrystals
• Physical Radiation Effects
• Polycrystals
• Quantum Efficiency
• Silicon
• Silicon Ions
• Substrates
• Temperature Dependence
• Temperature Range 0065-0273 K
• Temperature Range 0273-0400 K
• Temperature Range 0400-1000 K
• Thin Films

Language

English

License

Unknown

External links

• Full record on hdl.handle.net