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Low Temperature Mobility of Steps on the 4He Crystal Facets: Effects of 3He Impurities

Authors
  • Parshin, Alexander Ya.1
  • 1 P.L.Kapitza Institute for Physical Problems, ul Kosygina 2, Moscow, 117334, Russia , Moscow
Type
Published Article
Journal
Journal of Low Temperature Physics
Publisher
Kluwer Academic Publishers-Plenum Publishers
Publication Date
Jan 01, 1998
Volume
110
Issue
1-2
Pages
133–140
Identifiers
DOI: 10.1023/A:1022579120845
Source
Springer Nature
Keywords
License
Yellow

Abstract

At low temperatures, the dissipation due to scattering of thermal phonons by elementary steps on the facets of helium crystals is very small;3He impurities may dominate in dissipative processes even at low concentrations. We calculate the step mobility determined by collisions of the step with impurities in bulk liquid and impurities absorbed on the liquid-solid interface, in different temperature and concentration regions.

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