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Low temperature grown GaNAsSb: A promising material for photoconductive switch application

  • Tan, Kian Hua
  • Yoon, Sonn Fatt
  • Wicaksono, Satrio
  • Loke, Wan Khai
  • Li, D. S.
  • Saadsaoud, Naïma
  • Tripon-Canseliet, Charlotte
  • Lampin, Jean-François
  • Decoster, Didier
  • Chazelas, Jean
Publication Date
Sep 13, 2013
HAL-Paris 13
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We report a photoconductive switch using low temperature grown GaNAsSb as the active material. The GaNAsSb layer was grown at 200 °C by molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a valved antimony cracker source. The low temperature growth of the GaNAsSb layer increased the dark resistivity of the switch and shortened the carrier lifetime. The switch exhibited a dark resistivity of 107 Ω cm, a photo-absorption of up to 2.1 μm, and a carrier lifetime of ∼1.3 ps. These results strongly support the suitability of low temperature grown GaNAsSb in the photoconductive switch application.

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