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Low power and fast electro-optic silicon modulator with lateral p-i-n embedded photonic crystal nanocavity.

Authors
Type
Published Article
Journal
Optics Express
1094-4087
Publisher
The Optical Society
Publication Date
Volume
17
Issue
25
Pages
22505–22513
Identifiers
DOI: 10.1364/OE.17.022505
PMID: 20052175
Source
Medline
License
Unknown

Abstract

We have fabricated high-Q photonic crystal nanocavities with a lateral p-i-n structure to demonstrate low-power and high-speed electro-optic modulation in a silicon chip. GHz operation is demonstrated at a very low (microW level) operating power, which is about 4.6 times lower than that reported for other cavities in silicon. This low-power operation is due to the small size and high-Q of the photonic crystal nanocavity.

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