Longitudinal optic phonon-plasmon coupling in delta-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates
- Authors
-
- jiang, cp
- huang, zm
- zf, li
- yu, j
- guo, sl
- lu, w
- chu, jh
- cui, lj
- zeng, yp
- zhu, zp
- wang, bq
- Publication Date
- Jan 01, 2001
- Source
- Knowledge Repository of SEMI,CAS
- Keywords
-
- Quantum-Wells
- Accumulation Layer
- Raman-Scattering
- Excitations
- Ga1-Xinxas
- Spectra
- 半导体物理
- Quantum Wells
- Raman Effect
- Infrared Spectra
- Spectrum Analysis
- Wells, Quantum
- Multiple Quantum Well Structures
- 拉曼散射
- Combination Scattering Spectra
- Hyper Raman Effect
- Raman Scattering
- Raman Spectra
- 光谱
- Spectrum, Infra-Red
- Spectrum, Infrared
- Spectra
- Spectrum
- Ir Spectra
- Optical Spectra
- Matrix Isolation Spectra
- Multiphoton Spectra
- Three-Photon Spectra
- Multiphoton Spectroscopy
- Three-Photon Spectroscopy
- Quantum Beat Spectra
- Absorption Spectra
- Light Absorption Spectra
- Light Reflection Spectra
- Optical Absorption Spectra
- Optical Reflection Spectra
- Reflection Spectra
- Stokes Lines
- Time Resolved Spectra
- Transition Moments
- Tunnelling Spectra
- Iets
- Inelastic Electron Tunnelling Spectra
- Tunneling Spectra
- Two-Photon Spectra
- Visible Spectra
- 谱
- 光谱学
- Analysis, Spectrum
- Spectrochemical Analysis
- Spectrochemistry
- Spectroscopy
- Atomic Emission Spectroscopy
- Atomic Fluorescence Spectroscopy
- Beam-Foil Spectra
- Radiation Quenching
- Fluorescence Quenching
- Luminescence Quenching
- Quenching (Optical)
- Fluorimetry
- Icp-Aes
- Inductively Coupled Plasma-Atomic Emission Spectrometry
- Spectres
- Spektra
- Analyse Spectrochimique
- Colorimetric Analysis
- Spectrophotometric Analysis
- Spektrochemische Analyse
- Optical Spectrum
- Spectroscopic Analysis
- Spectrometry
- Spectral Analysis
- Spectrographic Analysis
- Spectrometric Analysis
- 发光猝灭
- Spectrography
- License
- Unknown
- External links
Abstract
InAlAs/InGaAs metamorphic high-electron-mobility transistor structures with different spacer layers on GaAs substrates are characterized by Raman measurements. The influence of In0.52Al0.48As spacer thickness on longitudinal optic phonon-plasmon coupling is investigated. It is found that the intensity of GaAs-like longitudinal optic phonon, which couples with collective intersubband transitions of two-dimensional electron gas, is strongly affected by the different subband energy spacings, subband electron concentrations, and wave function distributions, which are determined by different spacer thicknesses. (C) 2001 American Institute of Physics.
