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Local Infrared Spectroscopy of Highly Doped Semiconductors Structures Based on Scattering-type Nanoscopy and Photoinduced Force Microscopy

Authors
  • Huang, Yi
Publication Date
Sep 21, 2018
Source
HAL
Keywords
Language
English
License
Unknown
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Abstract

In this thesis, highly doped semiconductor (HDSC) InAsSb nanostructures have been investigated by near-field nanoscopy in the mid-infrared range. First, infrared plasmonic materials are introduced as well as well as the characterization tools used in this thesis. Herein, two types of nanostructured HDSC samples are studied: HDSC 1D gratings and HDSC 2D array. To characterize the HDSC samples, both phase-sensitive scattering type nanoscopy (s-SNOM) and the more recent Photoinduced Force Microscopy (PiFM) are used. The fundamental aspects of these two microscopies are presented and detailed instrumental information is provided. For HDSC 1D gratings, both techniques are used for spectroscopic nano-imaging in the vicinity of the plasma frequency, where the material behaves as an epsilon-near-zero (ENZ) material. The two responses are compared and discussed in terms of model. For HDSC 2D array, the investigation is carried out by s-SNOM. Both localized plasmonic resonance and ENZ properties are observed and compared with analytical simulations. The signature of a highly localized surface plasmon resonance confined on the edge mode is observed in the experimental images, in agreement with electromagnetic simulations

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