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Local-gated single-walled carbon nanotube field effect transistors assembled by AC dielectrophoresis.

Authors
  • Stokes, Paul
  • Khondaker, Saiful I
Type
Published Article
Journal
Nanotechnology
Publication Date
Apr 30, 2008
Volume
19
Issue
17
Pages
175202–175202
Identifiers
DOI: 10.1088/0957-4484/19/17/175202
PMID: 21825663
Source
Medline
License
Unknown

Abstract

We present a simple and scalable technique for the fabrication of solution processed and local-gated carbon nanotube field effect transistors (CNT-FETs). The approach is based on the directed assembly of individual single-walled carbon nanotubes from dichloroethane via AC dielectrophoresis (DEP) onto pre-patterned source and drain electrodes with a local aluminum gate in the middle. Local-gated CNT-FET devices display superior performance compared to a global back gate with on-off ratios >10(4) and maximum subthreshold swings of 170 mV/dec. The local bottom-gated DEP-assembled CNT-FETs will facilitate large-scale fabrication of complementary metal-oxide-semiconductor (CMOS) compatible nanoelectronic devices.

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