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LIQUID-PHASE EPITAXY GROWTH AND PROPERTIES OF GAINASSB/ALGAASSB/GASB HETEROSTRUCTURES

Authors
  • gong, xy
  • yang, bh
  • yd, ma
  • gao, fs
  • yu, y
  • han, wj
  • lui, xf
  • jy, xi
  • wang, zg
  • lin, ly
  • shizuoka, xy gong
Publication Date
Jan 01, 1991
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
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Abstract

The GaInAsSb/AlGaAsSb/GaSb heterostructures were grown by the liquid phase epitaxy (LPE) technique. The materials were characterized by means of optical microscopy, electroprobe microanalysis (EPMA), double-crystal X-ray diffraction, capacitance-voltage (C-V) and Van der Pauw measurments, infrared absorption spectra, photoluminescence and laser Raman scattering. The results show that the materials have fine surface morphology, low lattice mismatch and good homogeneity. Room-temperature light-emitting diodes with an emission wavelength of 2.2-mu-m were obtained by using the GaInAsSb/AlGaAsSb DH structures.

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