Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy
- Authors
-
- pan, z
- lh, li
- zhang, w
- lin, yw
- rh, wu
- Publication Date
- Jan 01, 2000
- Source
- Knowledge Repository of SEMI,CAS
- Keywords
-
- Temperature Pulsed Operation
- Chemical-Vapor-Deposition
- Quantum-Wells
- Laser-Diode
- Tertiarybutylarsine
- Gaas
- 半导体物理
- Chemical Vapor Deposition
- Atomic Layer Deposition
- Vapor-Plating
- Quantum Wells
- Gallium Arsenide
- Cvd (Chemical Vapor Deposition)
- Deposition, Chemical Vapor
- Vapor Deposition, Chemical
- Chemische Beschichtung Aus Dampfphase
- Revetement Chimique En Phase Vapeur
- Atomic Layer Epitaxial Growth
- Ale
- Mle Growth
- Molecular Layer Epitaxial Growth
- Chemical Beam Epitaxial Growth
- Cbe
- Gas Source Mbe
- Gsmbe
- Metalorganic Molecular Beam Epitaxy
- Mombe
- Ommbe
- Chemical Vapour Deposition
- Apcvd
- Cvd
- Laser Cvd
- Laser-Induced Cvd
- Lpcvd
- Chemical Vapour Infiltration
- Chemical Vapor Infiltration
- Cvi
- Crystal Growth From Vapour
- Laser Deposition
- Mocvd
- Metalorganic Chemical Vapour Deposition
- Movpe
- Omcvd
- Omvpe
- Molecular Beam Epitaxial Growth
- Mbe
- Migration-Enhanced Epitaxy
- Vapour Phase Epitaxial Growth
- Hot Wall Epitaxial Growth
- Vapor Phase Epitaxial Growth
- Vpe
- Cvi (Fabrication)
- Ald
- Molecular Beam Epitaxy
- Coulomb-Bethe
- Many-Body Expansion
- 真空镀膜
- Coating, Vacuum
- Deposition, Vapor
- Vacuum Coating
- Vacuum Metallizing
- Vapor Deposition
- Vapor-Phase Deposition
- Bedamfung
- Deposition De La Phase Vapeur
- Cvd (Deposition)
- Wells, Quantum
- Multiple Quantum Well Structures
- Gaas
- Arseniures De Gallium
- Galliumarsenid
- License
- Unknown
- External links
Abstract
We have studied the growth of GaInNAs by a plasma-assisted molecular-beam epitaxy (MBE). It was found that the N-radicals were incorporated into the epitaxial layer like dopant atoms. In the range of 400-500 degrees C, the growth temperature (T-g) mainly affected the crystal quality of GaInNAs rather than the N concentration. The N concentration dropped rapidly when T-g exceeded 500 degrees C. Considering N desorption alone is insufficient to account for the strong falloff of the N concentration with T-g over 500 degrees C, the effect of thermally-activated N surface segregation must be taken into account. The N concentration was independent of the arsenic pressure and the In concentration in GaInNAs layers, but inversely proportional to the growth rate. Based on the experimental results, a kinetic model including N desorption and surface segregation was developed to analyze quantitatively the N incorporation in MBE growth. (C) 2000 American Institute of Physics. [S0003-6951(00)00928-1].
