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Junction depth dependence of breakdown in silicon detector diodes

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DOI: 10.1016/0168-9002(96)00015-0
OAI: oai:inspirehep.net:430053
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INSPIRE-HEP
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Abstract

The high voltage capability of detector diodes fabricated in the planar process is limited by the high field generated at the edge of the junction. We have fabricated diodes with increased junction depth with respect to our standard process and find a significantly higher breakdown voltage, in reasonable agreement with previous studies of junction breakdown.

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