Affordable Access

deepdyve-link
Publisher Website

Junction depth dependence of breakdown in silicon detector diodes

Authors
  • Beck, G.A.
  • Carter, A.A.
  • Pritchard, T.W.
  • Carter, J.R.
  • Munday, D.J.
  • Robinson, D.
  • Wyllie, K.
  • Greenwood, N.M.
  • Lucas, A.D.
  • Wilburn, C.D.
Publication Date
Jan 01, 1996
Identifiers
DOI: 10.1016/0168-9002(96)00015-0
OAI: oai:inspirehep.net:430053
Source
INSPIRE-HEP
Keywords
License
Unknown
External links

Abstract

The high voltage capability of detector diodes fabricated in the planar process is limited by the high field generated at the edge of the junction. We have fabricated diodes with increased junction depth with respect to our standard process and find a significantly higher breakdown voltage, in reasonable agreement with previous studies of junction breakdown.

Report this publication

Statistics

Seen <100 times