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ITEP MEVVA ion beam for rhenium silicide production.

Authors
  • Kulevoy, T1
  • Gerasimenko, N
  • Seleznev, D
  • Kropachev, G
  • Kozlov, A
  • Kuibeda, R
  • Yakushin, P
  • Petrenko, S
  • Medetov, N
  • Zaporozhan, O
  • 1 Institute for Theoretical and Experimental Physics, Moscow 117218, Russia. [email protected]
Type
Published Article
Journal
Review of Scientific Instruments
Publisher
American Institute of Physics
Publication Date
Feb 01, 2010
Volume
81
Issue
2
Identifiers
DOI: 10.1063/1.3264636
PMID: 20192471
Source
Medline
License
Unknown

Abstract

The rhenium silicides are very attractive materials for semiconductor industry. In the Institute for Theoretical and Experimental Physics (ITEP) at the ion source test bench the research program of rhenium silicide production by ion beam implantation are going on. The investigation of silicon wafer after implantation of rhenium ion beam with different energy and with different total dose were carried out by secondary ions mass spectrometry, energy-dispersive x-ray microanalysis, and x-ray diffraction analysis. The first promising results of rhenium silicide film production by high intensity ion beam implantation are presented.

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