Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition

Authors

• fu, d
• zhang, r
• liu, b
• xie, zl
• xiu, xq
• sl, gu
• lu, h
• zheng, yd
• chen, yh
• wang, zg

Publication Date

Jan 01, 2011

Source

Knowledge Repository of SEMI,CAS

Keywords

• Fundamental-Band Gap
• Indium Nitride
• Buffer Layer
• Dependence
• Sapphire
• Mocvd
• 半导体物理
• Dependency
• Aluminum Oxide
• Atomic Layer Deposition
• Center-Periphery Relations
• Core-Periphery Relations
• Dependent Nations
• Dependence
• Dependency Theory
• Economic Dependence
• 蓝宝石
• Alumina
• Al<Sub>2</Sub>O<Sub>3</Sub>
• Bayer Process
• Aluminium Compounds
• Aluminum Compounds
• Sapphire
• Alumine
• Aluminiumoxid
• Oxyde D Aluminium
• Tonerde
• Saphir
• Sapphire (Francais)
• Aluminium Oxide
• Atomic Layer Epitaxial Growth
• Ale
• Mle Growth
• Molecular Layer Epitaxial Growth
• Chemical Beam Epitaxial Growth
• Cbe
• Gas Source Mbe
• Gsmbe
• Metalorganic Molecular Beam Epitaxy
• Mombe
• Ommbe
• Chemical Vapour Deposition
• Apcvd
• Chemical Vapor Deposition
• Cvd
• Laser Cvd
• Laser-Induced Cvd
• Lpcvd
• Chemical Vapour Infiltration
• Chemical Vapor Infiltration
• Cvi
• Crystal Growth From Vapour
• Laser Deposition
• Mocvd
• Metalorganic Chemical Vapour Deposition
• Movpe
• Omcvd
• Omvpe
• Molecular Beam Epitaxial Growth
• Mbe
• Migration-Enhanced Epitaxy
• Vapour Phase Epitaxial Growth
• Hot Wall Epitaxial Growth
• Vapor Phase Epitaxial Growth
• Vpe
• Cvi (Fabrication)
• Ald
• Molecular Beam Epitaxy
• Coulomb-Bethe
• Many-Body Expansion

License

Unknown

External links

• Full record on ir.semi.ac.cn