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INVESTIGATION OF POROUS SILICON BY SCANNING-TUNNELING-MICROSCOPY AND ATOMIC-FORCE MICROSCOPY

Authors
  • yu, t
  • laiho, r
  • heikkila, l
  • turkuwihuri, yu t univ
Publication Date
Jan 01, 1994
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
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Abstract

The size and distribution of surface features of porous silicon layers have been investigated by scanning tunneling and atomic force microscopy. Pores and hillocks down to 1-2 nm size were observed, with their shape and distribution on the sample surface being influenced by crystallographic effects. The local density of electronic states show a strong increase above 2 eV, in agreement with recent theoretical predictions.

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