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Investigation on InGaAs/InAlAs quantum cascade lasers

Authors
  • zhang, qs
  • liu, fq
  • zhang, yz
  • wang, zg
  • gao, hh
  • krier, a
Publication Date
Jan 01, 2001
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
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Abstract

The preparation and main characteristics of the InGaAs/InAlAs quantum cascade laser were given. The device has a reinforced ridge waveguide structure. The threshold current obtained at 80K is about 0. 5A, and the corresponding threshold current density is about 5kA/cm(2).

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