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Investigation of GaSb epilayer grown on vicinal GaAs(001) substrate by high resolution x-ray diffraction

Authors
  • Qiu, YX
  • Li, MC
  • Wang, YT
  • Zhang, BS
  • Wang, Y
  • Liu, GJ
  • Zhao, LC
Publication Date
Jan 01, 2007
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
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Abstract

GaSb epilayers grown on GaAs(001) vicinal substrate misoriented towards (111) plane were studied using high-resolution x-ray diffraction (HRXRD). The results show that GaSb epilayers exhibit positive crystallographic tilt and the distribution of 60 degrees misfit dislocations (MDs) is imbalanced. The vicinal substrate also leads to the anisotropy of the mosaic structure, i.e. the lateral coherent lengths in [1 (1) over bar0] directions are larger than those in [110] directions. Furthermore, the full-width at half maximum (FWHM) of the off-axis peaks varies with the inclination angle, which is a result of different dislocation densities in the {111} glide planes.

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