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Interwell radiative recombination in the presence of random potential fluctuations in GaAs/AlGaAs biased double quantum wells

  • Timofeev, V.B.
  • Larionov, A.V.
  • Ioselevich, A.S.
  • Zeman, J.
  • Martinez, G.
  • Hvam, Jørn Märcher
  • Sørensen, Claus B.
Publication Date
Jan 01, 1998
Online Research Database In Technology
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The interwell radiative recombination from biased double quantum wells (DQW) in pin GaAs/AlGaAs heterostructures is investigated at different temperatures and external electrical fields. The luminescence line of interwell recombination of spatially separated electron-hole pairs exhibits systematic narrowing with temperature increase from 4.5 to 30 K. A theoretical model is presented which explains the observed narrowing in terms of lateral thermally activated tunneling of spatially separated e-h pairs localized by random potential fluctuations in the quantum wells. (C) 1998 American Institute of Physics. [S0021-3640(98)01208-0]

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