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INTERFACIAL FORMATION PROCESS AND REACTIONS BETWEEN AU AND HYDROGENATED AMORPHOUS SI STUDIED BY XPS AND AES

Authors
  • zhong, zt
  • wang, dw
  • liao, xb
  • mou, sm
  • cf, li
  • fan, y
  • acad, zt r zhong
Publication Date
Jan 01, 1991
Source
Knowledge Repository of SEMI,CAS
Keywords
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Unknown
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Abstract

Interfacial formation processes and reactions between Au and hydrogenated amorphous Si have been studied by photoemission spectroscopy and Auger electron spectroscopy. A three-dimensional growth of Au metal cluster occurs at initial formation of the Au/a-Si:H interface. When Au deposition exceeds a critical time, Au and Si begin interdiffusing and react to create an Au-Si alloy region. Annealing enhances interdiffusion and a Si-rich region exists on the topmost surface of Au films on a-Si:H.

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