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Interface of wet oxidized AlGaAs/GaAs distributed Bragg reflectors

Authors
  • y.), li ry (li r.
  • z. g.), zg wang (wang
  • b.), (xu
  • p.), p jin (jin
  • x.), x guo (guo
  • m.), chen (chen
Publication Date
Jan 01, 2007
Source
Knowledge Repository of SEMI,CAS
Keywords
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Abstract

The interface of wet oxidized Al0.97Ga0.03As/GaAs in a distributed Bragg reflector (DBR) structure has been studied by means of transmission electron microscopy and Raman spectroscopy. With the extension of oxidation time, the oxide/GaAs interfaces are not abrupt any more. There is an amorphous film near the oxide/GaAs interface, which is Ga2O3 related to the prolonged heating. In the samples oxidized for 10 and 20 min, there are some fissures along the oxidized AlGaAs/GaAs interfaces. In the samples oxidized or in situ annealed for long time, no such fissures are present due to the complete removal of the volatile products.

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