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Interaction modes in Mo/Si diffusion couple at non-isothermal conditions

Authors
  • Kharatyan, S. L.1, 2
  • Aghayan, M. A.1
  • Chatilyan, H. A.1
  • 1 National Academy of Sciences, Nalbandyan Institute of Chemical Physics, 5/2 Sevak str., Yerevan, 0014, Armenia , Yerevan (Armenia)
  • 2 Yerevan State University, Department of Inorganic and Analytical Chemistry, 1 Manukyan str., Yerevan, 0025, Armenia , Yerevan (Armenia)
Type
Published Article
Journal
International Journal of Self-Propagating High-Temperature Synthesis
Publisher
Allerton Press
Publication Date
Jul 01, 2014
Volume
23
Issue
3
Pages
138–140
Identifiers
DOI: 10.3103/S1061386214030054
Source
Springer Nature
Keywords
License
Yellow

Abstract

Non-isothermal siliconizing in Si-clad Mo wires has been studied over a wide range of heating rates Vh and silicon layer thicknesses δSi. At T = 1000–1600°C, the reaction was found to proceed in two stages: by Mo(s) + Si(s) mechanism (stage I) and by Mo(s) + Si(l) mechanism (stage II). For sufficiently thin silicon layers, non-isothermal Mo-Si reaction is single-step and ends up before reaching the melting point of silicon: a decrease in the heating rate is accompanied by marked expansion of a range of Si layer thickness (δSi) within which the Mo-Si reaction accomplishes at stage I. Based on the above data, the Vh-δSi diagram discerning four different siliconizing modes of Mo was plotted. Within a wide range of heating rates and for sufficiently small Mo particles non-isothermal reaction of Mo with Si may proceed by purely solid-state mechanism.

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