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INTERACTION OF CO WITH SI AND SIO2 DURING RAPID THERMAL ANNEALING

Authors
  • chen, wd
  • cui, yd
  • hsu, cc
  • tao, j
  • acad, wd r chen
Publication Date
Jan 01, 1991
Source
Knowledge Repository of SEMI,CAS
Keywords
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Unknown
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Abstract

The interaction of Co with Si and SiO2 during rapid thermal annealing has been investigated. Phase sequence, layer morphology, and reaction kinetics were studied by sheet resistance, x-ray diffraction, Auger electron spectroscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy. With increasing annealing temperature, Co film on Si(100) is transformed sequentially into Co2Si, CoSi, and finally CoSi2 which corresponds to the minimum of sheet resistance. No evidence of silicide formation was observed for Co/SiO2 annealed even at the high temperature of 1050-degrees-C.

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