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Integrated Nano-Scale Silicon Sensors Using Top-Down Fabrication

Authors
Type
Published Article
Journal
Applied Physics Letters
Publisher
American Institute of Physics
Publication Date
Dec 17, 2003
Volume
83
Issue
22
Pages
4613–4615
Identifiers
DOI: 10.1063/1.1630853
Source
LIBNA
License
Green

Abstract

Semiconductor device-based sensing of chemical and biological entities has been demonstrated through the use of micro- and nanoscale field-effect devices and close variants. Although carbon nanotubes and silicon nanowires have been demonstrated as single molecule biosensors, the fabrication methods that have been used for creating these devices are typically not compatible with modern semiconductor manufacturing techniques and their large scale integration is problematic. These shortcomings are addressed by recent advancements in microelectronic fabrication techniques which resulted in the realization of nanowire-like structures. Here we report a method to fabricate silicon nanowires at precise locations using such techniques. Our method allows for the realization of truly integrated sensors capable of production of dense arrays. Sensitivity of these devices to changes in the ambient gas composition is also shown.

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