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Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions

Authors
  • gioffré, mariano
  • coppola, giuseppe
  • iodice, mario
  • casalino, maurizio
Publication Date
Nov 03, 2018
Identifiers
DOI: 10.3390/s18113755
OAI: oai:mdpi.com:/1424-8220/18/11/3755/
Source
MDPI
Keywords
Language
English
License
Green
External links

Abstract

This paper presents the design, fabrication, and characterization of Schottky erbium/silicon photodetectors working at 1.55 &micro / m. These erbium/silicon junctions are carefully characterized using both electric and optical measurements at room temperature. A Schottky barrier &Phi / B of ~673 meV is extrapolated / the photodetectors show external responsivity of 0.55 mA/W at room temperature under an applied reverse bias of 8 V. In addition, the device performance is discussed in terms of normalized noise and noise-equivalent power. The proposed devices will pave the way towards the development of Er-based photodetectors and light sources to be monolithically integrated in the same silicon substrate, and both operating at 1.55 &micro / m.

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