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InN layers grown by MOCVD on SrTiO3 substrates

  • jia, ch
  • chen, yh
  • zhou, xl
  • liu, gh
  • guo, y
  • liu, xl
  • yang, sy
  • wang, zg
Publication Date
Jan 01, 2010
Knowledge Repository of SEMI,CAS
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Epitaxial wurtzite InN thin films have been grown by metal-organic chemical vapor deposition on (1 1 1) SrTiO3 (STO) substrates. Interestingly, twin domain epitaxy induced by the surface reconstruction of STO is observed with the in-plane orientation relationships of [(1) over bar 1 0 0]InN parallel to [<(1)over bar > 1 0]STO and [2 <(1 1)over bar > 0]InN parallel to[<(1)over bar > 1 0]STO, which is helpful to release the strain. The InN films on STO substrates exhibit a strong photoluminescence emission around 0.78 eV. Particularly, using STO substrates opens up a possibility to integrate InN with the functional oxides. (C) 2009 Elsevier B.V. All rights reserved

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