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Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes

Authors
  • zhang, zy
  • cm, li
  • jin, p
  • meng, xq
  • xu, b
  • xl, ye
  • wang, zg
  • chinese, zy r zhang
Publication Date
Jan 01, 2003
Source
Knowledge Repository of SEMI,CAS
Keywords
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Abstract

We have investigated the optical properties of asymmetric multiple layer stacked self-assembled InAs quantum dot with different interlayer. We found that asymmetric multiple stacked QD samples with In0.2Ga0.8As + GaAs interlayer can afford a 180nm flat spectral width with strong PL intensity compared to other samples at room temperature. We think this result is due to the introduction of In0.2Ga0.8As strain-reducing layer. Additionally, for the broad spectral width and the strong PL intensity, this structure can be a promising candidate for quantum-dot superluminescent diodes.

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