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Influence of defects in n(-)-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors

Authors
  • zhao, dg
  • jiang, ds
  • zhu, jj
  • liu, zs
  • zhang, sm
  • liang, jw
  • yang, h
  • li, x
  • xy, li
  • gong, hm
Publication Date
Jan 01, 2007
Source
Knowledge Repository of SEMI,CAS
Keywords
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Unknown
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Abstract

The influence of defects on the responsivity of GaN Schottky barrier ultraviolet photodetectors with n(-)-GaN/n(+)-GaN layer structures is investigated. It is found that employing undoped GaN instead of Si-doped GaN as the n(-)-GaN layer brings about a higher responsivity due to a lower Ga vacancy concentration. On the other hand, the dislocations may increase the recombination of electron-hole pairs and enhance the surface recombination in the photodetectors. Employing undoped GaN and reducing the dislocation density in the n(-)-GaN layer are necessary to improve the responsivity of Schottky barrier photodetectors. (c) 2007 American Institute of Physics.

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