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Influence of B2O3 Addition on the Properties of TiO2 Thick Film at Various Annealing Temperatures for Hydrogen Sensing

Authors
  • Mohd Chachuli, Siti Amaniah1, 2
  • Hamidon, Mohd Nizar1
  • Ertugrul, Mehmet3
  • Mamat, Md. Shuhazlly1
  • Jaafar, H.1
  • Aris, Norhafiz1
  • 1 Universiti Putra Malaysia, Serdang, Selangor, 43400 UPM, Malaysia , Serdang (Malaysia)
  • 2 Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, Durian Tunggal, Melaka, 76100, Malaysia , Durian Tunggal (Malaysia)
  • 3 Ataturk University, Erzurum, 25240, Turkey , Erzurum (Turkey)
Type
Published Article
Journal
Journal of Electronic Materials
Publisher
Springer US
Publication Date
Mar 11, 2020
Volume
49
Issue
5
Pages
3340–3349
Identifiers
DOI: 10.1007/s11664-020-08059-0
Source
Springer Nature
Keywords
License
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Abstract

To increase the adhesion of thick film on a substrate, boron oxide (B2O3) was added to titanium dioxide (TiO2), and the change in the morphology, crystallinity and band gap of TiO2 thick film was investigated. TiO2 and TiO2-B2O3 pastes were prepared and deposited on the microscopic glass using screen-printing technique and then annealed under air at different temperatures of 400°C, 450°C and 500°C for 30 min. The morphology, elemental composition, structure and absorption of the thick films were characterized using FESEM, EDX, XRD and UV–visible spectroscopy. The TiO2 and TiO2-B2O3 thick films were fabricated as gas sensors and exposed to 100–1000 ppm of hydrogen at an operating temperature of 300°C. The results revealed that the addition of B2O3 increased the crystallinity of anatase phases and rutile phases in TiO2 as annealing temperature increased. The TiO2-B2O3(T500) gas sensor exhibited the highest response to various concentrations of hydrogen (100–1000 ppm) at an operating temperature of 300°C.

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