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Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

  • yu-xin), (wu
  • jian-jun), jj zhu (zhu
  • gui-feng), gf chen (chen
  • shu-ming), sm zhang (zhang
  • de-sheng), ds jiang (jiang
  • zong-shun), zs liu (liu
  • de-gang), dg zhao (zhao
  • hui), h wang (wang
  • yu-tian), yt wang (wang
  • hui), h yang (yang
Publication Date
Jan 01, 2010
Knowledge Repository of SEMI,CAS
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We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.

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