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Indium doping effect on GaN in the initial growth stage

  • yuan, hr
  • dc, lu
  • liu, xl
  • chen, z
  • wang, xh
  • wang, d
  • han, pd
Publication Date
Jan 01, 2001
Knowledge Repository of SEMI,CAS
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Three minutes' growth was carried out to investigate the indium-doping effect on initially grown GaN. Indium-doped and undoped samples were grown by low-pressure metalorganic vapor phase epitaxy. Atomic force microscope observation revealed that In-doping modified the morphology of the nuclei. Indium-doping also enhanced wetting between the buffer and nuclei layers, which was also supported by optical transmission. Photoluminescence suggested that indium-doping obviously enhanced band-edge related emission even in the nucleation stage. X-ray diffraction performed on samples grown for 20 minutes indicated improvement of the crystalline quality through indium-doping. The mechanism of the indium-doping effect was discussed.

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