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InAs/GaAs quantum-dot superluminescent diodes with 110 nm bandwidth

Authors
  • liu, n
  • jin, p
  • wang, zg
Publication Date
Jan 01, 2005
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
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Abstract

Broadband superluminescent diodes are fabricated by using InAs/GaAs self-assembled quantum dots as an active region. The devices exhibited properties of 110 run bandwidth with the centre of 1.1 mu m and above 30 mW output under pulse injection at room temperature.

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