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Improving the Josephson energy in high-Tc superconducting junctions for ultra-fast electronics.

Authors
  • Navarro, H1
  • Sirena, M
  • Haberkorn, N
  • 1 Instituto Balseiro, Universidad Nacional de Cuyo and Comisión Nacional de Energía Atómica, Av. Bustillo 9500, 8400 San Carlos de Bariloche, Argentina. , (Argentina)
Type
Published Article
Journal
Nanotechnology
Publisher
IOP Publishing
Publication Date
Mar 06, 2020
Volume
31
Issue
10
Pages
105701–105701
Identifiers
DOI: 10.1088/1361-6528/ab59f7
PMID: 31751967
Source
Medline
Language
English
License
Unknown

Abstract

We report the electrical transport of thin vertically-stacked Josephson tunnel junctions. The devices were fabricated using 16 nm thick GdBa2Cu3O7-δ electrodes and 1-4 nm SrTiO3 as an insulating barrier. The results show Josephson coupling for junctions with SrTiO3 barriers of 1 and 2 nm. Subtracting the residual current in the Fraunhofer patterns, energies of 3.1 mV and 5.7 mV at 12 K are obtained for STO barriers of 1 nm and 2 nm, respectively. The residual current may be related to the contribution of pinholes and thickness fluctuations in the STO barrier. These values are promising for reducing the influence of thermal noise and increasing the frequency operation rate in superconducting devices using high-temperature superconductors.

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