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Improvement of Crystal Quality of Epitaxial Silicon-Germanium Alloy Layers by Carbon Additions

Authors
  • Mi, J.
  • Letourneau, P.
  • Ganiere, J. D.
  • Gailhanou, M.
  • Dutoit, M.
  • Dubois, C.
  • Dupuy, J. C.
  • Bremond, G.
Publication Date
Jan 01, 1994
Source
Infoscience @ EPFL
Keywords
License
Unknown
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Abstract

Improved Si1-xGex/Si hetero-epitaxy has been achieved by RTCVD in the presence of small amounts of C3H8 during growth. Carbon presumably scavenges oxygen and acts as a surfactant to inhibit three dimensional growth.

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