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Improved linearity, stability, and thermal performance of multi-mesa-channel AlGaN/GaN HEMTs

Authors
  • Asubar, Joel1
  • Tokuda, Hirokuni2
  • Kuzuhara, Masaaki2
  • Zenji Yatabe3
  • Nishiguchi, Kenya4
  • Hashizume, Tamotsu4
Type
Published Article
Journal
PISIKA - Journal of the Physics Society of the Philippines
Publisher
Physics Society of the Philippines (Samahang Pisika Ng Pilipinas)
Publication Date
Dec 24, 2018
Volume
1
Identifiers
DOI: 10.20526/pisika.01a18.11
Source
MyScienceWork
License
White

Abstract

With its wide bandgap of 3.4 eV, gallium nitride (GaN) is considered as a key semiconductor material for realizing ultra-low-loss power devices. However, GaN-based devices is still plagued by current collapse, which is the temporary reduction of current after application of electrical stress. In this work, we present the state-of-art Multi-Mesa-Channel (MMC) AlGaN/GaN HEMT being developed in our laboratory. The MMC HEMT is fabricated in a way to realize parallel mesa-shaped nano-channels separated by trenches. Investigations have revealed that the MMC HEMT is highly resistant to current collapse and other instabilities, making it a leading power electronics prospect.

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