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Improved GaN layer morphology by hydride vapor phase epitaxy on misoriented Al(2)O(3) wafers

Authors
  • Scholz, F.
  • Brueckner, P.
  • Habel, F.
  • Peter, M.
  • Köhler, K.
Publication Date
Jan 01, 2005
Source
Fraunhofer-ePrints
Keywords
Language
English
License
Unknown
External links

Abstract

Crack-free thick GaN layers have been grown by hydride vapor phase epitaxy on on-axis as well as on off-axis GaN-Al2O3 templates. A dramatic difference in surface quality could be traced back to the misorientation of the substrates: Mirror-like layers have been obtained for slightly off-oriented substrates, whereas pyramids and other surface structures were found on samples grown on exactly oriented wafers. Such excellent surfaces may make further surface treatment prior to a subsequent use of these wafers in further epitaxial processes obsolete.

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