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Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes

  • j. b.), jb you (you
  • x. w.), xw zhang (zhang
  • s. g.), sg zhang (zhang
  • j. x.), jx wang (wang
  • z. g.), zg yin (yin
  • h. r.), tan (tan
  • w. j.), wj zhang (zhang
  • p. k.), pk chu (chu
  • b.), b cui (cui
  • a. m.), am wowchak (wowchak
  • a. m.), am dabiran (dabiran
  • p. p.), pp chow (chow
Publication Date
Jan 01, 2010
Knowledge Repository of SEMI,CAS
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n-ZnO/p-GaN heterojunction light-emitting diodes with and without a sandwiched AlN layer were fabricated. The electroluminescence (EL) spectrum acquired from the n-ZnO/p-GaN displays broad emission at 650 nm originating from ZnO and weak emission at 440 nm from GaN, whereas the n-ZnO/AlN/p-GaN exhibits strong violet emission at 405 nm from ZnO without GaN emission. The EL intensity is greatly enhanced by inserting a thin AlN intermediate layer and it can be attributed to the suppressed formation of the GaOx interfacial layer and confinement effect rendered by the AlN potential barrier layer.

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