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Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

Authors
  • chaomin), (wu
  • jingzhi), jz shang (shang
  • baoping), bp zhang (zhang
  • jiangyong), jy zhang (zhang
  • jinzhong), (yu
  • qiming), qm wang (wang
Publication Date
Jan 01, 2010
Source
Knowledge Repository of SEMI,CAS
Keywords
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Abstract

We studied the impact of the thickness of GaN buffer layer on the properties of distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition (MOCVD). The samples were characterized by using metallographic microscope, transmission electron microscope (TEM), atomic force microscopy (AFM), X-ray diffractometer (XRD) and spectrophotometer. The results show that the thickness of the GaN buffer layer can significantly affect the properties of the DBR structure and there is an optimal thickness of the GaN buffer layer. This work would be helpful for the growth of high quality DBR structures.

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