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Impact of oxygen plasma treatment on the dynamic on-resistance of AlGaN/GaN high-electron-mobility transistors

Authors
  • Asubar, Joel T.1
  • Sakaida, Yoshiki1
  • Yoshida, Satoshi1
  • Zenji Yatabe2
  • Tokuda, Hirokuni1
  • Hashizume, Tamotsu2
  • Kuzuhara, Masaaki1
Type
Published Article
Journal
Applied Physics Express
Publisher
Japan Society of Applied Physics
Publication Date
Oct 12, 2015
Volume
8
Identifiers
DOI: 10.7567/apex.8.111001
Source
MyScienceWork
License
White

Abstract

We studied the effects of pre-passivation oxygen plasma treatment of the AlGaN surface on the current collapse of AlGaN/GaN high-electron-mobility transistors (HEMTs). Oxygen plasma-treated devices generally exhibited significantly less dynamic on-resistance (Ron) compared with untreated control devices. We also extended our investigation to HEMTs with a GaN cap layer. Interestingly, after oxygen plasma treatment, we found that GaN-capped HEMTs showed a dynamic Ron behavior that was essentially similar to that of oxygen plasma-treated uncapped HEMTs, suggesting that the GaN cap layer plays an inconsequential role in current collapse mitigation when employed in conjunction with oxygen plasma treatment.

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