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Images of edge current in InAs/GaSb quantum wells

Authors
  • Spanton, Eric M.
  • Nowack, Katja C.
  • Du, Lingjie
  • Sullivan, Gerard
  • Du, Rui-Rui
  • Moler, Kathryn A.
Type
Published Article
Publication Date
Jun 21, 2014
Submission Date
Jan 07, 2014
Identifiers
DOI: 10.1103/PhysRevLett.113.026804
Source
arXiv
License
Yellow
External links

Abstract

Quantum spin Hall devices with edges much longer than several microns do not display ballistic transport: that is, their measured conductances are much less than $e^2/h$ per edge. We imaged edge currents in InAs/GaSb quantum wells with long edges and determined an effective edge resistance. Surprisingly, although the effective edge resistance is much greater than $h/e^2$, it is independent of temperature up to 30 K within experimental resolution. Known candidate scattering mechanisms do not explain our observation of an effective edge resistance that is large yet temperature-independent.

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