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Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells

  • zhihua), (hu
  • xianbo), xb liao (liao
  • hongwei), hw diao (diao
  • yi), y cai (cai
  • shibin), sb zhang (zhang
  • elvira), fortunato e (fortunato
  • rodrigo), r martins (martins
Publication Date
Jan 01, 2006
Knowledge Repository of SEMI,CAS
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A wide bandgap and highly conductive p-type hydrogenated nanocrystalline silicon (nc-Si:H) window layer was prepared with a conventional RF-PECVD system under large H dilution condition, moderate power density, high pressure and low substrate temperature. The optoelectrical and structural properties of this novel material have been investigated by Raman and UV-VIS transmission spectroscopy measurements indicating that these films are composed of nanocrystallites embedded in amorphous SiHx matrix and with a widened bandgap. The observed downshift of the optical phonon Raman spectra (514.4 cm(-1)) from crystalline Si peak (521 cm(-1)) and the widening of the bandgap indicate a quantum confinement effect from the Si nanocrystallites. By using this kind of p-layer, a-Si:H solar cells on bare stainless steel foil in nip sequence have been successfully prepared with a V c of 0.90 V, a fill factor of 0.70 and an efficiency of 9.0%, respectively. (c) 2006 Elsevier B.V. All rights reserved.

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