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High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric

Authors
  • Shao, Yan1
  • Wu, Xiaohan1
  • Zhang, Mei-Na1
  • Liu, Wen-Jun1
  • Ding, Shi-Jin1
  • 1 Fudan University, School of Microelectronics, Shanghai, 200433, People’s Republic of China , Shanghai (China)
Type
Published Article
Journal
Nanoscale Research Letters
Publisher
Springer (Biomed Central Ltd.)
Publication Date
Apr 02, 2019
Volume
14
Issue
1
Identifiers
DOI: 10.1186/s11671-019-2959-1
Source
Springer Nature
Keywords
License
Green

Abstract

Electrical characteristics of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) are compared by using O2 plasma-enhanced atomic layer deposition Al2O3 dielectrics at different temperatures. High-performance a-IGZO TFTs are demonstrated successfully with an Al2O3 dielectric deposited at room temperature, which exhibit a high field-effect mobility of 19.5 cm2 V− 1 s− 1, a small subthreshold swing of 160 mV/dec, a low threshold voltage of 0.1 V, a large on/off current ratio of 4.5 × 108, and superior negative and positive gate bias stabilities. This is attributed to the hydrogen-rich Al2O3 dielectric deposited at room temperature in comparison with higher deposition temperatures, thus efficiently passivating the interfacial states of a-IGZO/Al2O3 and the oxygen vacancies and improving conductivity of the a-IGZO channel by generating additional electrons because of enhanced hydrogen doping during sputtering of IGZO. Such an extremely low thermal budget for high-performance a-IGZO TFTs is very attractive for flexible electronic application.

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