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Highly reflective and conductive AlInN/GaN distributed Bragg reflectors realized by Ge-doping

Authors
  • Seneza, Cleophace1
  • Berger, Christoph1
  • Sana, Prabha1
  • Witte, Harmut1
  • Bläsing, Jürgen1
  • Dempewolf, Anja1
  • Dadgar, Armin1
  • Christen, Jürgen1
  • Strittmatter, André1
  • 1 Otto-von-Guericke-Universität Magdeburg, Germany , (Germany)
Type
Published Article
Journal
Japanese Journal of Applied Physics
Publisher
Japan Society of Applied Physics
Publication Date
Dec 22, 2021
Volume
61
Issue
1
Identifiers
DOI: 10.35848/1347-4065/ac3d43
Source
ioppublishing
Keywords
Disciplines
  • Crystal growth, surfaces, interfaces, thin films, and bulk materials
License
Unknown

Abstract

We report on the realization of highly conductive and highly reflective n-type AlInN/GaN distributed Bragg reflectors (DBR) for use in vertical cavity surface emitters in a metalorganic vapor phase epitaxy process. While Ge-doping enables low-resistive n-type GaN/AlInN/GaN heterostructures, very high Ge doping levels compromise maximum optical reflectivities of DBRs. Simulations of the Bragg mirror’s reflectivities together with structural analysis by X-ray diffraction reveal an increased absorption within the doped AlInN layers and interface roughening as major causes for the observed reduction of the optical reflectivity. By adjusting the Ge doping level in the AlInN layers, this structural degradation was minimized and highly conductive, 45-fold AlInN/GaN DBR structures with a maximum reflectivity of 99% and vertical specific resistance of 5 × 10–4 Ω cm2 were realized.

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