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Highly microcrystalline phosphorous‐doped Si:H very thin films deposited by RF‐PECVD

Authors
  • Wilson, Alestair
  • Fourmond, Erwann
  • SAIDI, Bilel
  • Fornacciari, Benjamin
  • BROTTET, Solène
  • Juhel, Marc
  • Gros-Jean, Mickael
Publication Date
Jan 01, 2022
Identifiers
DOI: 10.1002/pssa.202100876
OAI: oai:HAL:hal-03657259v1
Source
HAL
Keywords
Language
English
License
Unknown
External links

Abstract

Finely tuning crystallinity and doping of hydrogenated microcristalline silicon thin films is a keypoint into obtaining high quality devices for above integrated circuit (above-IC) image sensors. This study focuses on the structural and electrical properties of RF-PECVD deposited microcrystalline silicon (µc-Si:H) contact layers. In this work, phosphorus doped µc-Si:H is deposited by capacitive coupled plasma RF-PECVD (13,56 MHz) from a SiH4 + H2 + PH3 gas mixture with varying phosphine concentration. The influence of phosphine concentration on dopant concentration, active dopant concentration and crystallinity is studied by SIMS, Hall effect measurement and Raman spectroscopy respectively. High doping level is attained, reaching up to 1.7×10 20 cm-3. Furthermore, "low power" and "high power" deposition conditions are studied which lead to incubation layers of different nature.

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