Affordable Access

HIGH-RESOLUTION PHOTOLUMINESCENCE STUDIES OF (211) CDTE GROWN ON (211)B GAAS SUBSTRATE

Authors
  • chen, sd
  • lin, l
  • xz, he
  • zy, xu
  • luo, cp
  • jz, xu
  • china, sd n r chen
Publication Date
Jan 01, 1994
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
External links

Abstract

Sharp and rich photoluminescence lines accociated with free exciton (FE), excitons bound to neutral acceptors (A0X) and donors (D0X) in molecular beam epitaxially (MBE) grown (211) CdTe/(211)B GaAs have been reported for the first time. The results show that the (211) CdTe/(211)B GaAs grown under optimized conditions could have as high a crystal perfection as those grown on lattice-matched substrates.

Report this publication

Statistics

Seen <100 times