HIGH-RESOLUTION PHOTOLUMINESCENCE STUDIES OF (211) CDTE GROWN ON (211)B GAAS SUBSTRATE
- Authors
- Publication Date
- Jan 01, 1994
- Source
- Knowledge Repository of SEMI,CAS
- Keywords
- License
- Unknown
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Abstract
Sharp and rich photoluminescence lines accociated with free exciton (FE), excitons bound to neutral acceptors (A0X) and donors (D0X) in molecular beam epitaxially (MBE) grown (211) CdTe/(211)B GaAs have been reported for the first time. The results show that the (211) CdTe/(211)B GaAs grown under optimized conditions could have as high a crystal perfection as those grown on lattice-matched substrates.
