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High-power quantum dot superluminescent diode with integrated optical amplifier section

Authors
  • Wang, ZC
  • Jin, P
  • Lv, XQ
  • Li, XK
  • Wang, ZG
Publication Date
Jan 01, 2011
Source
Knowledge Repository of SEMI,CAS
Keywords
License
Unknown
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Abstract

A 1.1 mu m high-power quantum dot superluminescent diode has been fabricated by using a two-section device structure which consists of a superluminescent section and an optical amplifier section. The device exhibits 380 mW output power with 50 nm bandwidth or 260 mW output power with 66 nm bandwidth.

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