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High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE)

Authors
  • liu, jp
  • huang, dd
  • jp, li
  • sun, dz
  • kong, my
Publication Date
Jan 01, 1999
Source
Knowledge Repository of SEMI,CAS
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Abstract

Uniform and high phosphorous doping has been demonstrated during Si growth by GSMBE using disilane and phosphine. The p-n diodes, which consist of a n-Si layer and a p-SiGe layer grown on Si substrate, show a normal I-V characteristic. A roughening transition during P-doped Si growth is found. Ex situ SEM results show that thinner film is specular. When the film becomes thicker, there are small pits of different sizes randomly distributed on the flat surface. The average pit size increases, the pit density decreases, and the size distribution is narrower for even thicker film. No extended defects are found at the substrate interface or in the epilayer. Possible causes for the morphological evolution are discussed. (C) 1999 Elsevier Science B.V. All rights reserved.

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