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High-performance hybrid phenyl-C61-butyric acid methyl ester/Cd(3)P(2) nanowire ultraviolet-visible-near infrared photodetectors.

Authors
  • Chen, Gui
  • Liang, Bo
  • Liu, Xi
  • Liu, Zhe
  • Yu, Gang
  • Xie, Xuming
  • Luo, Tao
  • Chen, Di
  • Zhu, Mingqiang
  • Shen, Guozhen
  • Fan, Zhiyong
Type
Published Article
Journal
ACS Nano
Publisher
American Chemical Society
Publication Date
Jan 28, 2014
Volume
8
Issue
1
Pages
787–796
Identifiers
DOI: 10.1021/nn405442z
PMID: 24364536
Source
Medline
License
Unknown

Abstract

In this work, single-crystalline p-type Cd3P2 nanowires (NWs) were synthesized on a Cd sheet via a facile chemical vapor deposition method. Then field-effect transistors and high-performance photodetectors were fabricated based on these NWs. It was found that hole mobility of a pristine Cd3P2 NW is around 2.94 cm(2) V(-1) s(-1). Meanwhile, high responsivity and photoconductive gain were observed on these devices across a broad spectral range covering UV-visible to NIR with high stability and reproducibility. Furthermore, hybrid organic-inorganic n-type phenyl-C61-butyric acid methyl ester (PCBM) and p-type Cd3P2 NW heterojunction photodetectors were also fabricated, exhibiting much improved photocurrent and photoconductive gain, as compared to the device made of pristine Cd3P2 NWs. Intriguingly, the flexible hybrid photodetectors have been fabricated on plastic substrates and characterized under various bending conditions, demonstrating their excellent flexibility and robustness. The high performance and flexibility of the hybrid photodetectors are promising for further applications requiring large-area, high-sensitivity, and high-speed photodetectors with broad-spectrum photoresponse.

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